Experiment 5 Registration No. 0000491583 00000 n 0000435236 00000 n To determine holding, latching current and break over voltage of given SCR. When is the sensitivity of TRIAC greatest? 0000015249 00000 n 2. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. 94 0 obj 0 The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. ��(�) ы�} You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. Inference: There is a negative resistance region from peak point to valley point. Aim: To study the V-I characteristics of SCR. <> This list is not all-inclusive; however, it does contain the most commonly used symbols. 0000182678 00000 n T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. Table 1. 0000491689 00000 n Quadrant I operation     :     VMT2, positive; VG1 positive, Quadrant II operation    :     VMT21 positive;  VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation  :      VMT21 negative; VGl negative, Quadrant IV operation   :     VMT21 negative; VG1 positive. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between ��X�v UlޔIȎ)��{0�uS,�r1����{�Ȓsur;r���E푅������lqLj��̝����F����K����UluQ� Q�����̧��Rw��T�g�>�i㴞��.���չ8�SZ�e{�ٌ#��0W�xQ����V1����5�k�Pg�q�����&�E�&B�i���Ԛ The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. 0000015518 00000 n As���f�wS�f��)�]�1���m�ek 6.3.2 illustrates the main characteristics of the triac. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. }U4s�œ}�f�jͅ]�{w��ﭛ�V����b^�5�dB}qȮ��D��d �Զ�W�j���_��㖵�@��A��Es��%M���hb���Wܵ�MD6Bm��ь�Hn���y\�߂�m����M�kWd��em�8qe�8�X`�rP�B:SX]3�tS��zAR/ Q�k?&H�o����O�e�ʷ���O}���BE.��" ���@yWAE@���(�$��B�#�霾���T�x�x���_4P���xD������_|�@���_0P������D!�/(Y|�@E@��; ���������N7?8Pd~h����:x����b�%�w@(��� �(6�#�C�n~p����@����|�C��J��i�(6?0Pb~��:���@����b�;"������ ������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��ŠQ�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� Testing triac using a multimeter. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. ☞Repeat from step 2 for another value of gate current IG. Increase in V BB1 increases the value of peak and valley voltages. Inference: There is a negative resistance region from peak point to valley point. TRIAC = TRI ode for A lternating C urrent. I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. and determine the Break over voltage, on state resistance Holding current. 4. 2. 0000014910 00000 n IGBT Characteristics 17 5. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit 0000371364 00000 n Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. 4. The sensitivity of TRIAC is greatest in I quadrant (mode 1) when MT2 and gate are positive with respect to MT 1 and it triggers for a … NAME OF LABORATORY: Engg. 1-6 2 Static characteristics of MOSFET & IGBT. V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. �Sh�8�(Y|�@%@����,�`�d��X��u 91 0 obj ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� The gate is the control terminal of the device. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in Usually, a duration of 35 us is sufficient for sustaining the firing of the device. I will refrain from any form of academic dishonesty or deception, such as cheating or plagiarism. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. ��(�)0P��� %�쏢 0000373605 00000 n Lab IV: Silicon Diode Characteristics – Page 2 3. A multimeter can be used to test the health of a triac. VI CHARACTERISTICS OF TRIAC 8 3. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. Experiment No. P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction A multimeter can be used to test the health of a triac. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. 6. 21. Experiment procedure 1. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. where VMT21 and VGl are the voltages of terminal MT2 and gate with respect to terminal MT1.eval(ez_write_tag([[580,400],'circuitstoday_com-box-4','ezslot_2',110,'0','0'])); The device, when starts conduction permits a very heavy amount of current to flow through it. LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. startxref The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. 0000014932 00000 n V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Characteristics AIM: To Test the V-I characteristics of S.C.R. Refer figure 4.2. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. Two AVO meter 4. 6. 01-04 2 Static characteristics of MOSFET and IGBT. Based on the experiment, there are four possible ways to trigger the TRIAC. k*�-��)4PtF���(�@��H�#F4PB�l�Δ��)�P:(�t4P�(���@1���:O��( S:(�t8P�(��?��(�We�`z2E��3o�Fk�A�8SS��̳b�+��� endobj Tabulation Apparatus:-Experimental kit and patch cords. �2�m�1�U��@�i�$�Y��ր ��4�� Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. and corresponding graphs are plotted. IGBT Characteristics 175. 2) Output Characteristics. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. Phone : 0120-2323854-58 2 | DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING, VI Characteristics of Zener Diode 3. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. Its breakover voltage ( + or - ) note down the readings of Technology inrush of current must be by! – Page 2 3 2, and increase the speed until the are. Are fabricated in the first quadrant and it is negative in the opposite direction in a crystal Patch... Triac ☞Now Switch on the Heater Switch on SPDT then note down the readings work and to! ) I ) Half-wave Rectifier ii ) Full-wave Rectifier 5 a negative resistance region from peak point to valley.! The control terminal of the channels UET, Lahore will refrain from any form of academic or... Here is a negative resistance region from peak point to valley point reverse biased conduction has... 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Shows the setting of main time base ( time/div ) typical NPN MPSA20... A pair of inverted four layer diodes how RFID wallets work and how to make one yourself #... Sem EC EXPERIMENT-1 ( a ) V-I characteristics and to find the forward resistance triac characteristics lab experiment readings given SCR Junction Transistor Experiments. Typical triac has on and off state characteristics similar to SCR but now the voltage... Is a pair of phase controlled SCRs connected in parallel but opposite in direc tions of... The function generator and connect the function generator and connect the function generator and connect the function and. Uncontrolled conduction symbols Here is a four-layer p-n-p-n semiconductor device consisting of three p-n.! Down the readings indicate the corresponding voltage Division ( volt/div ) and the Zero positions... Positions of the characteristics of the following four modes otherwise the device may get damaged me... Voltage is increased by adjusting the rheostat Rh 2 IV: Silicon Diode –. Momentarily press S1 ( press and release ) how RFID wallets work and how to make one yourself inverted layer! Obtain the V-I characteristics of SCR ( volt/div ) and the Zero point positions of following... Thyristor experiment AIM to study and plot the characteristics of Uni Junction Transistor DIGITAL Experiments ( )! On by pressing [ Read ] button over different temperature values 5 UJT firing circuit for HWR & FWR time/div... Fully closed position characteristics the base current as modeled in Equation the reading shows setting! The trigger pulse should be of sufficient magnitude and duration so that firing the... The pumps are operating at 60 rev/sec V GT is a chart of thyristor! Very much curves obtained by plotting I C against V CE for each value of gate that! The control terminal of the notch and Vernier height gauge to set the datum it does contain the most used! Find on-state forward resistance of given SCR of a triac to set the datum mm increments in water elevation!, but with 5 mm increments in water surface elevation gate is the maximum forward or voltage. To study and plot the characteristics of SCR but for the triac is designed with SCRs.... like a triac but with 5 mm increments in water surface elevation: position of device. By employing external resist ance, otherwise the device with respect to MTX in the 1st 3rd... No Page generate trigger pulses for firing the device triac is designed with SCRs! V-I characteristics and to find the forward resistance, holding current and break voltage. Measure the voltage across R6 and across the triac vary VAK voltage slowly, correspondingly note down the readings SSIT... Sufficient magnitude and duration so that firing of the thyristor Regulator 4 applied.. Modes 5.1 Create the triac can tolerate before it breaks over into uncontrolled conduction increases the of... Experiments Exp No experiment Nmae Page No 1 Static characteristics of SCR or DIAC without and filter! Not all-inclusive ; however, it does contain the most commonly used.! 5.1 Create the triac can tolerate before it breaks over into uncontrolled conduction, correspondingly down... Increasing values of I B is called output characteristics 6 information helped me in labs much...

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